Velocity overshoot onset in nitride semiconductors

The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation

A kinetic model derived from the Boltzmann equation, by using the spherical harmonic expansion method, is considered. This describes the evolution of an electron gas inside a bulk semiconductor in thermal equilibrium. The problem of velocity overshoot is analyzed in detail. A numerical scheme is proposed and the numerical results are shown.

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Nanosphere Lithography for Nitride Semiconductors

Transient velocity overshoot dynamics *in GaAs for electric fields

We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired? respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the ...

Modeling Effects of Electron-Velocity Overshoot in a MOSFET

A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET’s has been obtained. This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance produced by electron-velocity overshoot as cha...